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IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.

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IRFP 데이터시트(PDF) – International Rectifier

Products may be manufactured at one of several qualified locations. Mold flash shall not exceed 0.

It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Dimension D and E do not include mold flash.

Case Temperature tr td off tf Fig.

Contour of slot optional. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

Xian and Mingxin actually photo. B, Mar This datasheet is subject to change without notice.


Please note that some Vishay documentation may still make reference to the IEC definition. Product names and markings noted herein may be trademarks of their respective owners. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Thermal pad contour optional with dimensions D1 and E1. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. Such statements are not binding statements about the suitability of products for a particular application. Repetitive rating; pulse width limited by maximum junction temperature see fig.

Datasheet «IRFP440»

Lead finish uncontrolled in L1. Drain Current Current regulator Same type as Irfpp440. These dimensions are measured at the outermost extremes of the plastic body.