The BUAF is a High voltage NPN power transistor for standard definition CRT display and it is available in an ISOWATTFX package. It is manufactured. isc website： isc & iscsemi is registered trademark. 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter. BUAF. TO-3PF. NPN Triple Diffused Planar Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Electrical Characteristics.
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BU508AF “original” Philips Transistor 2 PC
Who We Are Management. Resources Technical Documentation Product Specifications. Communications Equipment, Computers and Peripherals. Please enter a message. The BUAF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.
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The foregoing information relates to product sold on, or after, the date shown below. Buy Direct Add to cart. Japan South Korea Taiwan English. The product does not contain any of the restricted substances in concentrations and applications ub508af by the Directive, and for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering. IoT for Smart Things.
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