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BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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This data sheet contains final dqtasheet specifications. Budf philips semiconductors, budf datasheet. July 1 Rev 1. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. Typical collector storage and fall time. This data sheet contains target or goal specifications for product development. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

Typical collector-emitter saturation voltage.

BUDF Datasheet(PDF) – NXP Semiconductors

Refer to mounting instructions for F-pack envelopes. Typical DC current gain. Preliminary specification This data sheet contains preliminary data; supplementary data datashret be published later. C 1 Turn-off current. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.


No liability will be accepted by the publisher for any consequence of its use. Budf transistor equivalent substitute crossreference search.

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These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Buaf datasheet, equivalent, cross reference search.

July 2 Rev 1. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml.

Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

II Extension for repetitive pulse operation.

BU2508DF Silicon Diffused Power Transistor

Silicon diffused power transistor buaf datasheet catalog. Exposure to limiting values for extended periods may affect device reliability. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new dataheet, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet.

High collectorbase voltagevcbov high speed switching. Stress above one or more of the limiting values may cause permanent damage to the device. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and dataseet and may be changed without notice.


Publication thereof does not convey nor dtasheet any license under patent or other industrial or intellectual property rights.

Isc Silicon NPN Power Transistor

July 6 Rev 1. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

SOT; The seating plane is electrically isolated from all terminals. July 7 Rev 1. Typical base-emitter saturation voltage. Application information Where application information is given, it is advisory and does not form part of the specification. Buaf transistor datasbeet substitute crossreference search. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications.

Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.

July 5 Rev 1. C I Region of permissible DC operation.

Forward bias safe operating area.