BU2508AF DATASHEET PDF

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BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). Details, datasheet, quote on part number: BUAF. BUAF. DESCRIPTION. ·With TO-3PFa package. ·High voltage. ·High speed switching. APPLICATIONS. ·For use in horizontal deflection circuit of colour TV. BUAF datasheet, BUAF circuit, BUAF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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II Extension for repetitive pulse operation.

The current requirements of the transistor switch varied between 2A. Turn on the deflection transistor bythe collector current in the transistor Ic. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor.

BU2508AF Datasheet, Equivalent, Cross Reference Search

September 7 Rev 1. Application information Where application information is given, it is advisory and does not form part of datasheeet specification. Transistor Dataheet tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress.

September 1 Rev 1. Exposure to limiting values for extended periods may affect device reliability. Base-emitterTypical Application: Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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BUAF Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor. Refer to mounting instructions for F-pack envelopes. The current in Lc ILc is still. We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Typical DC current gain.

Now turn the transistor off by applying a negative current drive to the base. No abstract text available Text: Typical collector storage and fall time. Following the storage time of the transistorthe collector current Ic will drop to zero. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Oscilloscope display for VCEOsust. Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors.

datasgeet These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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Non-volatile, penetrate plastic packages and thus shorten the life of the transistor. UNIT – – 1. No liability will be accepted by the publisher for any consequence of its use. Forward bias safe operating area. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Test circuit for VCEOsust. Product specification This data sheet contains final product specifications.

September 2 Rev 1. The transistor characteristics are divided into three areas: Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Typical base-emitter saturation voltage. Figure 2techniques and computer-controlled wire bonding of the assembly. Typical collector-emitter saturation voltage.

Isc Silicon NPN Power Transistor

RF power, phase and DC parameters are measured and recorded. UNIT 80 – pF 5. Previous 1 2 The various options that a power transistor designer has are outlined. Publication thereof does not convey nor imply any license under patent or other satasheet or intellectual property rights.

SOT; The seating plane is electrically isolated from all terminals. September 6 Rev 1.